Germanium-silicon single crystals with Si content 0.73 were successfully grown. GeSi solid solution semiconductors are expected as high-speed electronic devices, substrates, and various functional materials for photo-sensors, X-ray detectors, etc. for band gap and lattice parameter engineering. Large single crystals with Si content 0.73 of diameter and length more than 20 and 70 mm, respectively, have been successfully grown. The result was reported in the Japan Industrial Journal on March 28, and in the Kahoku Shimpo on May 5, 2003.
Prof. Suezawa group（Crystal Lattice Defect group）and LAM