4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)（11/18-20）
|Time||Nov. 18 (Sun) - 20 (Tue), 2018|
|Location||Auditorium, Bldg.2, Institute for Materials Research, Tohoku Univ.
Staring from the vapor-phase growth of GaN by H. P. Marcus and J. J. Tietjen in 1969, the research on nitride semiconductors has progressed with a focus on GaN. Nitride LEDs and LDs have been widely used as solid state lighting for energy saving and high-density recording such as Blu-ray, since blue LEDs became commercially available in 1996. Nitride transistors with high-frequency and high-power will come to realization in near future. Recently, nitride solar cells have been studied for covering over the whole range of solar spectrum. Thus, the device application has progressed in a variety of fields; however, the crystalline quality is still poor in comparison with conventional III-V semiconductors such as GaAs and InP. For the future development in high efficiency, long device-lifetime, and the expansion of application, it is indispensable to improve the crystalline quality and to control the crystal characteristics.
|Contact||Physics of Electronic Materials, Tomoyuki Tanikawa
TEL: +81-22-215-2621, FAX: +81-22-215-2302
E-mail: tanikawa_at_imr.tohoku.ac.jp （Please change "_at_" to @）