ZnO, a transparent oxide semiconductor, is of growing importance in advanced electronics. Epitaxial growth of ZnO has been the subject of intense focus leading to our recent demonstration of ultraviolet light-emitting diodes and transparent field-effect transistors. Here we have observed the quantum Hall-effect (QHE) in a high-mobility two-dimensional electron gas in ZnO based heterostructures. Demonstration of the QHE in an oxide heterostructure presents broad possibilities not only to realize transparent electronics but also to combine QHE with the versatile functionality of oxides in complex heterostructures. The work was done in collaboration with RIEC and JST, and was published in Science (online express) on January 25th (US eastern time). The highlights on our work was reported in newspapers (Kahoku Shimpo, Nikkei Sangyo, and Nikkan Kogyo) and broadcasted by NHK, Sendai TV, and Miyagi TV (January 26th, Japan time).
Optical microscope image of a quantum Hall device made of ZnO (background) and schematic illustration of a two-dimensional electron moving under magnetic field.
Prof. Kawasaki’s group（Superstructured thin film chemistry）