Research

AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process

2022/03/18

Publication Details

Authors

Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani,
Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa

Journal

Applied Physics Express

DOI

10.35848/1882-0786/ac5ba7

Online publication date

March 8, 2022

Press release online (in Japanese)

PDF:  844KB

From: AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process