Publication Details
Authors
Ryo Kagawa, Keisuke Kawamura, Yoshiki Sakaida, Sumito Ouchi, Hiroki Uratani,
Yasuo Shimizu, Yutaka Ohno, Yasuyoshi Nagai, Jianbo Liang, and Naoteru Shigekawa
Journal
DOI
Online publication date
March 8, 2022
Press release online (in Japanese)
PDF: 844KB
From: AlGaN/GaN/3C-SiC on diamond HEMTs with thick nitride layers prepared by bonding-first process