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Fe-Sn nanocrystalline films for flexible magnetic sensors with high thermal stability

2019/03/04

Publication Details
 

Y. Satake, K. Fujiwara, J. Shiogai, T. Seki, and A. Tsukazaki

Journal:Scientific Reports

DOI:10.1038/s41598-019-39817-8

Published online: March 1, 2019

Press release online (in Japanese): PDF 351KB

Sputtered Fe-Sn alloy films. (a) Layered Fe-Sn kagome compounds. The Fe3Sn kagome layer is depicted in the upper side, and the layer stackings in antiferromagnetic FeSn, ferromagnetic Fe3Sn2 and Fe3Sn are displayed in the lower side. (b) The device structure is shown schematically. An excitation current I was injected to an Fe-Sn film on an insulating substrate, and longitudinal voltage Vxx and transverse Hal voltage Vyx were measured. A magnetic field B is applied perpendicularly to the film plane. (c) Fe content x in FexSn1−xfilms was controlled by changing the Fe chip configuration on the Sn target. Error bars (standard deviations for x) are smaller than the symbols. A photograph when six Fe chips are placed is shown in the inset. The scale bar shows 10 mm. Blue, green, and, red broken lines correspond to x = 0.50 (FeSn), 0.60 (Fe3Sn2), and 0.75 (Fe3Sn), respectively. (d) XRD patterns for FexSn1−x films with x = 0.54, 0.62, and 0.78 grown on sapphire (0001) substrates at Tg = 500 °C. The data are shifted vertically for clarity. The film thicknesses were approximately 40 nm. See the text and Supplementary Fig. S1 for the phase identification of these films. (e) XRD patterns for 40-nm-thick Fe0.60Sn0.40 films on sapphire, glass and, PEN sheet substrates prepared at room temperature. (f) (False color image) Cross-sectional high-resolution transmission electron microscopy image of a room-temperature sputtered Fe0.60Sn0.40 film on a sapphire substrate. The scale bar shows 5 nm. The inset shows a selected area electron diffraction pattern, revealing the presence of nanocrystalline domains. (From Fe-Sn nanocrystalline films for flexible magnetic sensors with high thermal stability)