Publication Details
Authors：R. Yoshimi, K. Yasuda, A. Tsukazaki, K. S. Takahashi, M. Kawasaki, Y. Tokura
Journal:
DOI:
http://advances.sciencemag.org/content/4/12/eaat9989
Published online:
December 7, 2018
Press release online (Japanese text only):
[PDF: 1267KB]
Fig. 1: Rashba-Edelstein effect in ferromagnetic Rashba semiconductor (Ge,Mn)Te.(From: Current-driven magnetization switching in ferromagnetic bulk Rashba semiconductor (Ge,Mn)Te)