Magnetic tunnel junctions with a nearly zero moment manganese nanolayer with perpendicular magnetic anisotropy


Publication Details

Authors:K. Z. Suzuki, S. Kimura, H. Kubota, and S. Mizukami


ACS Applied Materials and Interface


Published online:

December 6, 2018

Press release online (Japanese text only):

[PDF: 666KB]

A magnetic nanolayer with a perpendicular magnetic easy axis and negligible magnetization is demonstrated. Even though a manganese metal is antiferromagnetic in bulk form, a few manganese monolayers grown on a paramagnetic ordered alloy template and capped by an oxide layer exhibit a strong perpendicular magnetic anisotropy field exceeding 19 T as well as a negligible magnetization of 25 kA/m. The nanolayer shows tunnel magnetoresistance. Moreover, the perpendicular magnetic anisotropy for the nanolayer can be reduced by applying an electric voltage. These findings will provide new insight into a creation of new nanolayer magnets.(From Magnetic Tunnel Junctions with a Nearly Zero Moment Manganese Nanolayer with Perpendicular Magnetic Anisotropy)