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2017
3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3)

Staring from the vapor-phase growth of GaN by H. P. Marcus and J. J. Tietjen in 1969, the research on nitride semiconductors has progressed with a focus on GaN. Nitride LEDs and LDs have been widely used as solid state lighting for energy saving and high-density recording such as Blu-ray, since blue LEDs became commercially available in 1996. Nitride transistors with high-frequency and high-power will come to realization in near future. Recently, nitride solar cells have been studied for covering over the whole range of solar spectrum. Thus, the device application has progressed in a variety of fields; however, the crystalline quality is still poor in comparison with conventional III-V semiconductors such as GaAs and InP. For the future development in high efficiency, long device-lifetime, and the expansion of application, it is indispensable to improve the crystalline quality and to control the crystal characteristics.

The purpose of the workshop is to analyze the status quo, find the direction to take in the future and the problems that need to be solved in the field of crystal growth of nitride semiconductors. To achieve this, the number of participants is limited to 50 persons including researchers from abroad, and the straightforward discussions are greatly encouraged among the selected professionals. Participants are expected to have common understandings in the current technologies and to find out the way to solve problems in the crystal growth. In the workshop, some selected topics will be presented at the beginning of each session, and the participants voluntarily present their data, which is followed by deep-and-intensive discussion. This style is not common but will bring us significant outcome. We are looking forward to seeing you all here in Heart of Northeast area of Japan, City of Sendai.

Time

Jan 16(Mon)-18(Wed), 2017

Location

Auditorium, Bldg.2, Institute for Materials Research, Tohoku Univ.[MAP]

Topics

http://www.matsuoka-lab.imr.tohoku.ac.jp/?IDGN-3

Program [PDF:327KB], Time Table [PDF:35KB] (Updated :Jan.12.2017 )

Registration Fee 20,000 JPY
Registration Deadline January 13th, 2017 - All the participants are required to contact the agency below.
Contact

Institute for Materials Research, Tohoku University

Tomoyuki TANIKAWA(Physics of Electronic Materials Division)

Phone: +81-(0)22-215-2621
e-mail: tanikawa_attmk_imr.tohoku.ac.jp(Please change "_attmk_" to @)
URL:  http://www.matsuoka-lab.imr.tohoku.ac.jp/?IDGN-3