Materials Development Division

Crystal Chemistry

Satoshi  UDA
Prof. Satoshi  UDA
Assoc.Prof. Junpei OKADA
Assist. Prof. Haruhiko KOIZUMI
Assist. Prof. Jun NOZAWA

A novel approach to the crystal growth by controlling the interface dynamics

Development of almost every functional material and device in the area of information technology has been aided by the research of the associated single crystal. This lab is concerned with the novel approach mainly for the growth from the melt by studying the relationship between the interface dynamics during growth and properties of grown crystals.

Special interests lie in the growth of new crystals via the manipulation of the interface dynamics (1) by the imposition of an interface-electric, -magnetic and -stress fields and (2) by the change of the solid-liquid energy relationship through the thermal or mechanical treatment on the solid or liquid. Combining these approaches will also shed new light on the crystal growth that has never been successful. Crystals developed this way will widen an application opportunity in the piezoelectric, magnetic, optic and other fields related to the highly-networked information society.

crystal growth, chemical potential, applying external fields
Model of crystallization

Model of crystallization by a colloidal crystal. (a) Impurity partitioning of colloidal crystallization is investigated by doping impurity particle. Partitioning behaviors such as relation between growth rate and effective partition coefficient are similar to those of ordinary crystal growth. (b) During growth of polycrystals, impurity particles (red fluorescent particles) segregate at grain boundary (GB). Impurity concentration at GBs is dependent on area of groove and misorientation angle between adjacent grains. (c) Colloidal crystals grow by two-dimensional nucleation when interaction between particles is tuned appropriately, which is similar growth mechanism for vapor or solution growth. Observation of one particle resolution offers deep understandings on phase transition kinetics.

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