Materials Design Division

Physics of Crystal Defects

Ichiro YONENAGA PHOTO
Prof. Ichiro YONENAGA
Assoc. Prof. Yutaka OHNO 
Assist. Prof. Kentaro KUTSUKAKE
Assist. Prof. Momoko DEURA

New Defect Science to develop and fabricate functional defects

This laboratory is engaged to establish fundamental knowledge of crystal defects / local distortions on an atomistic scale in semiconducting materials. For this purpose, we are characterizing various basic properties of defects, i. e., atomistic and electronic structures, nucleation processes and dynamic modifications as well as mutual reactions / complex formations in a wide variety of semiconductors as Si, Ge, SiC, (In, Al, Ga)N, ZnO, and so forth. The research is extended to control states of defects for advanced and ultimate functions of materials as Defect Science.

defect science, solar cells, nitride semiconductors, dislocations, grain boundaries
Nanoscopic mechanism of Cu precipitation at small angle tilt boundaries in Si; which can determine electrical properties of Sibased polycrystalline devices.

Nanoscopic mechanism of Cu precipitation at small angle tilt boundaries in Si; which can determine electrical properties of Sibased polycrystalline devices.

Quantitative analyses of the hardness & Young’s modulus in high-quality InN layers by nanoindentation; which can determine the durability of InN-based functional devices.

Quantitative analyses of the hardness & Young’s modulus in high-quality InN layers by nanoindentation; which can determine the durability of InN-based functional devices.

Growth and characterization of various kinds of Si multicrystals for solar cells (mono-like, highperformance multicrystalline, and conventional multicrystalline); toward the development of super-high-quality Si crystal using functional grain boundaries.

Growth and characterization of various kinds of Si multicrystals for solar cells (mono-like, highperformance multicrystalline, and conventional multicrystalline); toward the development of super-high-quality Si crystal using functional grain boundaries.

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