Materials Property Division

Low Temperature Physics

Atsushi TSUKAZAKI

Prof.Atsushi TSUKAZAKI

  • Assoc. Prof. Kohei FUJIWARA
  • Assist. Prof. Junichi SHIOGAI
  • Assist. Prof. Takayuki HARADA

Exploration for Low Temperature Physical Phenomena at Solid Interfaces

The research subject in this division is a further development of functionalities at the solid state interfaces. In particular, we aim to discover novel functions at the well-regulated and abrupt interfaces, which are fabricated by our thin-film growth technique. Combining the growth technique and electrostatic doping method enables us to induce highly mobile charge transport at the clean solid state interfaces.

Up to now, we have developed various examples of high-quality oxide and chalcogenide thin films and heterostructures, exhibiting intriguing physical phenomena. Recently, superconductivity and/or quantum transport have been tackled by newlydeveloped electrochemical and/or electrostatic tuning techniques. We continuously try to expand these growth technique and device physics to develop the potential for various materials and interfaces for future advancements in condensed matter physics.

thin-film growth, interfaces, oxides, chalcogenides
Sn-based transparent oxide semiconductor (upper left), (Bi,Sb)2Se3 topological insulator (lower left), molecular-beam epitaxy chamber(center), electric-field control of superconductivity in FeSe ultrathin films (right).

Sn-based transparent oxide semiconductor (upper left), (Bi,Sb)2Se3 topological insulator (lower left), molecular-beam epitaxy chamber (center), electric-field control of superconductivity in FeSe ultrathin films (right).

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