Materials Property Division

Low Temperature Physics Research Laboratory

Atsushi TSUKAZAKI

Prof.Atsushi TSUKAZAKI

  • Assoc. Prof. Kohei FUJIWARA
  • Assist. Prof. Motoki OSADA
  • Assist. Prof. Tsukasa TERADA
  • Specially Appointed Assist. Prof.  Masamichi NEGISHI

Exploration for Low Temperature Physical Phenomena at Solid Interfaces

The research subject in this division is a further development of functionalities at the solid state interfaces. In particular, we aim to discover novel functions at the well-regulated and abrupt interfaces, which are fabricated by our thin-film growth technique. Combining the growth technique and electrostatic doping method enables us to induce highly mobile charge transport at the clean solid state interfaces.

Up to now, we have developed various examples of high-quality oxide, chalcogenide, and topological insulator thin films and heterostructures, exhibiting intriguing physical phenomena. Recently, superconductivity, quantum transport, and device functionality have been explored in novel material systems by using newlydeveloped electrochemical and/or electrostatic tuning techniques. We continuously try to expand these growth technique and device physics to develop the potential for various materials and interfaces for future advancements in condensed matter physics.

thin-film growth, interfaces, oxides, chalcogenides, topological materials
Honeycomb oxide stabilized in an oxide superlattice (upper left), quantum anomalous Hall state of topological insulator and magnetic-field sensor using anomalous Hall effect (lower left), molecular-beam epitaxy chamber (center), electric-field control of superconductivity in FeSe ultrathin films (right).

Honeycomb oxide stabilized in an oxide superlattice (upper left), quantum anomalous Hall state of topological insulator and magnetic-field sensor using anomalous Hall effect (lower left), molecular-beam epitaxy chamber (center), electric-field control of superconductivity in FeSe ultrathin films (right)

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