Materials Property Division

Low Temperature Physics

塚﨑敦 写真
Prof. Atsushi TSUKAZAKI
Lecturer Kohei FUJIWARA
Assist. Prof. Junichi SHIOGAI
Assist. Prof. Takayuki HARADA

Exploration for low temperature physical phenomena at solid interfaces

The research subject in this division is a further development of functionalities at the solid state interfaces. In particular, we aim to discover novel functions at the well-regulated and abrupt interfaces, which are fabricated by our thin-fi lm growth technique. Combining the growth technique and electrostatic doping method enables us to induce highly mobile charge transport at the clean solid state interfaces.
Up to now, we have developed various examples of high-quality oxide and chalcogenide thin fi lms and heterostructures, exhibiting intriguing physical phenomena. Recently, superconductivity and/or quantum transport have been tackled by newly-developed electrochemical and/or electrostatic tuning techniques. We continuously try to expand these growth technique and device physics to develop the potential for various materials and interfaces for future advancements in condensed matter physics.

thin-film growth, interfaces, oxides, chalcogenides
Growth chamber based on molecular-beam epitaxy (left) and Hall-bar device and transparent oxide semiconductor film (right).

Growth chamber based on molecular-beam epitaxy (left) and Hall-bar device and transparent oxide semiconductor
film (right).

Electric-field-induced superconductivity in FeSe ultrathin films and electrochemical etching process (inset).

Electric-field-induced superconductivity in FeSe ultrathin
films and electrochemical etching process (inset).

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