Materials Property Division

Crystal Physics

Kozo FUJIWARA PHOTO
Prof. Kozo FUJIWARA
Assoc.Prof. Haruhiko MORITO
Assist. Prof. Kensaku MAEDA

Crystal growth physics for the future of the human being society

We have to face an energy and environmental problem to build a persistent human being society. The expectation to photovoltaic devices increases year by year all over the world. The aim of our group is to create energy materials through fundamental studies of crystal growth mechanisms.
1. Development of in situ observation system:
We have developed a technology to observe a crystal/melt interface at a high temperature more than 1400°C.
2. Elucidation of melt growth mechanisms:
We study the melt growth mechanisms of various materials including semiconductors, metallic alloys and compounds to build a general theory of the melt growth mechanisms.
3. Development of crystal growth technology for obtaining a high homogeneous and high quality multicrystalline Si (mc-Si) ingot for solar cells:
We realize an mc-Si ingot for high-effi ciency solar cells and contribute to construction of energy-environment harmonic society.

crystal growth, in situ observation, crystal/melt interface, solar cells
In situ observation system and images of crystal/melt interface instability of multicrystalline Si.

In situ observation system and images of crystal/melt interface instability of multicrystalline Si

Casting furnace and mc-Si for solar cells

Casting furnace and mc-Si for solar cells

About IMR